A Monte Carlo-Based Probabilistic Approach to Switching Loss Estimation in Power MOSFETs

Authors

DOI:

https://doi.org/10.18618/REP.e202553

Keywords:

Monte Carlo Simulation, Silicon Carbide MOSFET, Statistical Analysis, Parameter Variability, Switching Losses

Abstract

Switching losses have been shown to have a significant impact on the efficiency and thermal management of power electronic systems, particularly in high-performance converters. Conventional estimation techniques frequently rely on deterministic parameters, which are unable to account for the inherent variability in semiconductor characteristics and gate-driving conditions. This limitation can result in erroneous predictions and an underestimation of design margins. In order to address this issue, the present paper proposes a probabilistic approach for estimating switching losses in MOSFETs, with applications demonstrated for both Silicon carbide (SiC) and Silicon (Si) devices, using the Monte Carlo method. The methodology involves treating key device and driver parameters, such as gate resistance, transconductance, and threshold voltage, as statistical variables. This approach enables the capture of inherent uncertainties in device behavior. The switching transients are characterized through Double Pulse Test (DPT) simulations across a wide range of voltage and current levels. Monte Carlo simulations are extensively performed to derive the statistical distribution of energy losses, ensuring realistic performance expectations under variable conditions. The findings indicate that parameter variability can lead to substantial discrepancies in switching loss predictions, underscoring the limitations of conventional deterministic methods. The proposed methodology provides a more robust and reliable foundation for thermal design, loss prediction, and reliability assessment in power converter applications, ultimately ensuring improved performance and increased lifespan of power electronic systems.

Downloads

Download data is not yet available.

Author Biographies

Wesley J. de Paula, Federal University of São João del-Rei

received his B.Sc. and M.Sc. degrees in Electrical Engineering from the Federal University of São João del-Rei (UFSJ), Brazil, in 2013 and 2015, respectively, and the Ph.D. degree from the Federal University of Juiz de Fora (UFJF) in 2020. Currently, he is an Assistant Professor at the UFSJ. His research interests include high-gain DC–DC converters, characterization of power semiconductor devices, optimization techniques applied to power electronics, electric drives, multilevel converters, and electric and hybrid vehicles. Dr. de Paula serves as a reviewer for several international journals and conferences in the fields of power electronics and electrical engineering.

Guilherme M. Soares, Federal University of Juiz de Fora

received the B.Sc., M.Sc., and Ph.D. degrees in Electrical Engineering from the Federal University of Juiz de Fora (UFJF), Juiz de Fora, Brazil, in 2012, 2014, and 2017, respectively. Since 2015, he has been a Professor with the Department of Electrical Engineering at UFJF. His current research interests include power electronic conversion, electric mobility, optimization techniques applied to power electronics, industrial informatics, visible light communication, and the Internet of Things (IoT). Dr. Soares serves as a reviewer for several international journals and conferences in the fields of power electronics and electrical engineering.

Pedro S. Almeida, Federal University of Juiz de Fora

received the B.Sc., M.Sc., and Ph.D. degrees in electrical engineering from the Federal University of Juiz de Fora (UFJF), Brazil, in 2010, 2012, and 2014, respectively. Since 2015, he has been a Professor of Electrical Engineering at UFJF, teaching both undergraduate and graduate courses. He has been a researcher with the Modern Lighting Laboratory (NIMO) since 2008, as part of the interinstitutional Power Electronics Systems Research Group (GESEP-UFJF). His main research interests include power electronics, high-efficiency and high-density converters, modular conversion architectures, wide-bandgap semiconductor devices, power factor correction, solid-state lighting, LED drivers, smart grids, electric vehicles, energy storage systems, microcontroller-based digital control, and the modeling, simulation, and control of power conversion systems.

Henrique A. C. Braga, Federal University of Juiz de Fora

Henrique A. C. Braga received the B.S. degree in electrical engineering from the Universidade Federal de Juiz de Fora (UFJF), Brazil, in 1982 and the Dr. Eng. degree from the Universidade Federal de Santa Catarina, Florianopolis, Brazil, in 1996. Since 1985, he has been teaching Basic Electronics and Power Electronics at the Universidade Federal de Juiz de Fora, in undergraduate and graduate levels. From 2005 to 2006 he was enrolled in a post-doctoral cooperation at Universidad de Oviedo, Gijon, Asturias, Spain. Dr. H. Braga is the author or co-author of more than 200 scientific papers in peer-reviewed technical conferences and journals. He also co-authored six book chapters. Prof. H. Braga is IEEE Life Senior Member and served the Institute as the Brazil Council Chairman, from 2010 to 2011. Prof. Braga chaired the Brazilian Power Electronics Society (Sobraep) from 2014-2015 and was the editor-in-chief of the Brazilian Journal of Power Electronics (now Open Journal of Power Electronics) from 2012 to 2013. Prof. Braga’s research interests are mainly related to the Power Electronics field, especially in electronic lighting systems and renewable resources applications. Since 2022 he has been the Dean of Engineering School at Universidade Federal de Juiz de Fora, an administrative position to be developed up to 2026.

References

W. Taha, F. Juarezt-Leon, M. Hefny, A. Jinesh, M. Poulton, B. Bilgin, A. Emadi, “Holistic Design and Development of a 100-kW SiC-Based Six-Phase Traction Inverter for an Electric Vehicle Application”, IEEE Transactions on Transportation Electrification, vol. 10, no. 2, pp. 4616–4627, 2024. DOI: https://doi.org/10.1109/TTE.2023.3313511

Z. Tang, Y. Yang, F. Blaabjerg, “Power electronics: The enabling technology for renewable energy integration”, CSEE Journal of Power and Energy Systems, vol. 8, no. 1, pp. 39–52, 2022.

A. Kumar, M. Moradpour, M. Losito, W.-T. Franke, S. Ramasamy, R. Baccoli, G. Gatto, “Wide Band Gap Devices and Their Application in Power Electronics”, Energies, vol. 15, no. 23, 2022. DOI: https://doi.org/10.3390/en15239172

W. J. de Paula, G. H. M. Tavares, D. C. Pereira, G. M. Soares, P. S. Almeida, H. A. C. Braga, “An extensive comparative study of switching losses prediction in power MOSFETs”, in 2018 13th IEEE International Conference on Industry Applications (INDUSCON), pp. 105–111, 2018. DOI: https://doi.org/10.1109/INDUSCON.2018.8627228

F. Krismer, J. W. Kolar, “Accurate Power Loss Model Derivation of a High-Current Dual Active Bridge Converter for an Automotive Application”, IEEE Transactions on Industrial Electronics, vol. 57, no. 3, pp. 881–891, 2010. DOI: https://doi.org/10.1109/TIE.2009.2025284

H. Wang, F. Wang, J. Zhang, “Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications”, IEEE Transactions on Electron Devices, vol. 55, no. 1, pp. 466–470, 2008. DOI: https://doi.org/10.1109/TED.2007.910573

D. Christen, J. Biela, “Analytical Switching Loss Modeling Based on Datasheet Parameters for MOSFETs in a Half-Bridge”, IEEE Transactions on Power Electronics, vol. 34, no. 4, pp. 3700–3710, April 2019. DOI: https://doi.org/10.1109/TPEL.2018.2851068

J. Chen, H. Peng, Z. Cheng, “Accurate Switching Performance Prediction and Characterization For Wide Range, High Frequency SiC High Voltage Generator”, in IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, vol. 1, pp. 5101–5106, 2019. DOI: https://doi.org/10.1109/IECON.2019.8926743

C. Qian, Z. Wang, G. Xin, X. Shi, “Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET”, IEEE Transactions on Power Electronics, vol. 37, no. 8, pp. 9551–9570, 2022. DOI: https://doi.org/10.1109/TPEL.2022.3152529

Y. Xu, C. N. M. Ho, A. Ghosh, D. Muthumuni, “A Datasheet-Based Behavioral Model of SiC MOSFET for Power Loss Prediction in Electromagnetic Transient Simulation”, in 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 521–526, 2019. DOI: https://doi.org/10.1109/APEC.2019.8721881

D. Cittanti, F. Iannuzzo, E. Hoene, K. Klein, “Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study”, in 2017 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1387–1394, 2017. DOI: https://doi.org/10.1109/ECCE.2017.8095952

W. J. de Paula, G. H. M. Tavares, G. M. Soares, P. S. Almeida, H. A. C. Braga, “Switching Losses Prediction Methods Oriented to Power MOSFETs: A Review”, IET Power Electronics, vol. 13, no. 14, pp. 2960–2970, Nov. 2020. DOI: https://doi.org/10.1049/iet-pel.2019.1003

W. J. de Paula, G. H. M. Tavares, G. M. Soares, P. S. Almeida, H. A. C. Braga, “An Improved Methodology for Switching Losses Estimation in SiC MOSFETs”, Eletrônica de Potência, vol. 25, no. 3, pp. 283–292, Sep. 2020. DOI: https://doi.org/10.18618/REP.2020.3.0010

M. Novak, A. Sangwongwanich, F. Blaabjerg, “Monte Carlo-Based Reliability Estimation Methods for Power Devices in Power Electronics Systems”, IEEE Open Journal of Power Electronics, vol. 2, pp. 523–534, 2021. DOI: https://doi.org/10.1109/OJPEL.2021.3116070

A. Sangwongwanich, F. Blaabjerg, “Monte Carlo Simulation With Incremental Damage for Reliability Assessment of Power Electronics”, IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 7366–7371, 2021. DOI: https://doi.org/10.1109/TPEL.2020.3044438

J. Callegari, M. Silva, R. de Barros, E. Brito, A. Cupertino, H. Pereira, “Lifetime evaluation of three-phase multifunctional PV inverters with reactive power compensation”, Electric Power Systems Research, vol. 175, p. 105873, 2019. DOI: https://doi.org/10.1016/j.epsr.2019.105873

J. Qi, J. Li, H. Feng, J. Shi, M. Fan, C. Jia, D. Zhen, “Reliability Assessment of Wind Power Converter Systems Based on Mission Profiles and Sub Module Life Correlations”, IEEE Access, vol. 12, pp. 166162–166175, 2024. DOI: https://doi.org/10.1109/ACCESS.2024.3494876

J. Brown, “Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter”, IEEE Transactions on Power Electronics, vol. 21, no. 1, pp. 3–10, 2006. DOI: https://doi.org/10.1109/TPEL.2005.861110

J. Guo, H. Ge, J. Ye, A. Emadi, “Improved Method for MOSFET Voltage Rise-Time and Fall-Time Estimation in Inverter Switching Loss Calculation”, in 2015 IEEE Transportation Electrification Conference and Expo (ITEC), pp. 1–6, 2015. DOI: https://doi.org/10.1109/ITEC.2015.7165790

ROHM Semiconductor, “SCT3120AL - SiC MOSFET, 650V, 21A, 120m, TO-247N”, https://www.rohm.com/products/sic-powerdevices/sic-mosfet/sct3120al-product, datasheet, Rev. 005, 2018, URL: https://www.rohm.com/products/sic-power-devices/sic-mosfet/sct3120al-product.

M. G. Pecht, M. Kang, Uncertainty Representation, Quantification, and Management in Prognostics, pp. 193–220, 2019. DOI: https://doi.org/10.1002/9781119515326.ch8

M. E. Hajiabadi, H. R. Mashhadi, “Analysis of the Probability Distribution of LMP by Central Limit Theorem”, IEEE Transactions on Power Systems, vol. 28, no. 3, pp. 2862–2871, 2013. DOI: https://doi.org/10.1109/TPWRS.2013.2252372

C. L. T. Borges, J. A. S. Dias, “A Model to Represent Correlated Time Series in Reliability Evaluation by Non-Sequential Monte Carlo Simulation”, IEEE Transactions on Power Systems, vol. 32, no. 2, pp. 1511–1519, 2017.

M. R. Ahmed, R. Todd, A. J. Forsyth, “Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions”, IEEE Transactions on Industrial Electronics, vol. 64, no. 11, pp. 9001–9011, 2017. DOI: https://doi.org/10.1109/TIE.2017.2721882

Downloads

Published

2025-10-01

How to Cite

[1]
W. J. de Paula, G. M. Soares, P. S. Almeida, and H. A. C. Braga, “A Monte Carlo-Based Probabilistic Approach to Switching Loss Estimation in Power MOSFETs”, Eletrônica de Potência, vol. 30, p. e202553, Oct. 2025.

Issue

Section

Original Papers