A Monte Carlo-Based Probabilistic Approach to Switching Loss Estimation in Power MOSFETs
DOI:
https://doi.org/10.18618/REP.e202553Keywords:
Monte Carlo Simulation, Silicon Carbide MOSFET, Statistical Analysis, Parameter Variability, Switching LossesAbstract
Switching losses have been shown to have a significant impact on the efficiency and thermal management of power electronic systems, particularly in high-performance converters. Conventional estimation techniques frequently rely on deterministic parameters, which are unable to account for the inherent variability in semiconductor characteristics and gate-driving conditions. This limitation can result in erroneous predictions and an underestimation of design margins. In order to address this issue, the present paper proposes a probabilistic approach for estimating switching losses in MOSFETs, with applications demonstrated for both Silicon carbide (SiC) and Silicon (Si) devices, using the Monte Carlo method. The methodology involves treating key device and driver parameters, such as gate resistance, transconductance, and threshold voltage, as statistical variables. This approach enables the capture of inherent uncertainties in device behavior. The switching transients are characterized through Double Pulse Test (DPT) simulations across a wide range of voltage and current levels. Monte Carlo simulations are extensively performed to derive the statistical distribution of energy losses, ensuring realistic performance expectations under variable conditions. The findings indicate that parameter variability can lead to substantial discrepancies in switching loss predictions, underscoring the limitations of conventional deterministic methods. The proposed methodology provides a more robust and reliable foundation for thermal design, loss prediction, and reliability assessment in power converter applications, ultimately ensuring improved performance and increased lifespan of power electronic systems.
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W. Taha, F. Juarezt-Leon, M. Hefny, A. Jinesh, M. Poulton, B. Bilgin, A. Emadi, “Holistic Design and Development of a 100-kW SiC-Based Six-Phase Traction Inverter for an Electric Vehicle Application”, IEEE Transactions on Transportation Electrification, vol. 10, no. 2, pp. 4616–4627, 2024. DOI: https://doi.org/10.1109/TTE.2023.3313511
Z. Tang, Y. Yang, F. Blaabjerg, “Power electronics: The enabling technology for renewable energy integration”, CSEE Journal of Power and Energy Systems, vol. 8, no. 1, pp. 39–52, 2022.
A. Kumar, M. Moradpour, M. Losito, W.-T. Franke, S. Ramasamy, R. Baccoli, G. Gatto, “Wide Band Gap Devices and Their Application in Power Electronics”, Energies, vol. 15, no. 23, 2022. DOI: https://doi.org/10.3390/en15239172
W. J. de Paula, G. H. M. Tavares, D. C. Pereira, G. M. Soares, P. S. Almeida, H. A. C. Braga, “An extensive comparative study of switching losses prediction in power MOSFETs”, in 2018 13th IEEE International Conference on Industry Applications (INDUSCON), pp. 105–111, 2018. DOI: https://doi.org/10.1109/INDUSCON.2018.8627228
F. Krismer, J. W. Kolar, “Accurate Power Loss Model Derivation of a High-Current Dual Active Bridge Converter for an Automotive Application”, IEEE Transactions on Industrial Electronics, vol. 57, no. 3, pp. 881–891, 2010. DOI: https://doi.org/10.1109/TIE.2009.2025284
H. Wang, F. Wang, J. Zhang, “Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications”, IEEE Transactions on Electron Devices, vol. 55, no. 1, pp. 466–470, 2008. DOI: https://doi.org/10.1109/TED.2007.910573
D. Christen, J. Biela, “Analytical Switching Loss Modeling Based on Datasheet Parameters for MOSFETs in a Half-Bridge”, IEEE Transactions on Power Electronics, vol. 34, no. 4, pp. 3700–3710, April 2019. DOI: https://doi.org/10.1109/TPEL.2018.2851068
J. Chen, H. Peng, Z. Cheng, “Accurate Switching Performance Prediction and Characterization For Wide Range, High Frequency SiC High Voltage Generator”, in IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, vol. 1, pp. 5101–5106, 2019. DOI: https://doi.org/10.1109/IECON.2019.8926743
C. Qian, Z. Wang, G. Xin, X. Shi, “Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET”, IEEE Transactions on Power Electronics, vol. 37, no. 8, pp. 9551–9570, 2022. DOI: https://doi.org/10.1109/TPEL.2022.3152529
Y. Xu, C. N. M. Ho, A. Ghosh, D. Muthumuni, “A Datasheet-Based Behavioral Model of SiC MOSFET for Power Loss Prediction in Electromagnetic Transient Simulation”, in 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 521–526, 2019. DOI: https://doi.org/10.1109/APEC.2019.8721881
D. Cittanti, F. Iannuzzo, E. Hoene, K. Klein, “Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study”, in 2017 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1387–1394, 2017. DOI: https://doi.org/10.1109/ECCE.2017.8095952
W. J. de Paula, G. H. M. Tavares, G. M. Soares, P. S. Almeida, H. A. C. Braga, “Switching Losses Prediction Methods Oriented to Power MOSFETs: A Review”, IET Power Electronics, vol. 13, no. 14, pp. 2960–2970, Nov. 2020. DOI: https://doi.org/10.1049/iet-pel.2019.1003
W. J. de Paula, G. H. M. Tavares, G. M. Soares, P. S. Almeida, H. A. C. Braga, “An Improved Methodology for Switching Losses Estimation in SiC MOSFETs”, Eletrônica de Potência, vol. 25, no. 3, pp. 283–292, Sep. 2020. DOI: https://doi.org/10.18618/REP.2020.3.0010
M. Novak, A. Sangwongwanich, F. Blaabjerg, “Monte Carlo-Based Reliability Estimation Methods for Power Devices in Power Electronics Systems”, IEEE Open Journal of Power Electronics, vol. 2, pp. 523–534, 2021. DOI: https://doi.org/10.1109/OJPEL.2021.3116070
A. Sangwongwanich, F. Blaabjerg, “Monte Carlo Simulation With Incremental Damage for Reliability Assessment of Power Electronics”, IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 7366–7371, 2021. DOI: https://doi.org/10.1109/TPEL.2020.3044438
J. Callegari, M. Silva, R. de Barros, E. Brito, A. Cupertino, H. Pereira, “Lifetime evaluation of three-phase multifunctional PV inverters with reactive power compensation”, Electric Power Systems Research, vol. 175, p. 105873, 2019. DOI: https://doi.org/10.1016/j.epsr.2019.105873
J. Qi, J. Li, H. Feng, J. Shi, M. Fan, C. Jia, D. Zhen, “Reliability Assessment of Wind Power Converter Systems Based on Mission Profiles and Sub Module Life Correlations”, IEEE Access, vol. 12, pp. 166162–166175, 2024. DOI: https://doi.org/10.1109/ACCESS.2024.3494876
J. Brown, “Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter”, IEEE Transactions on Power Electronics, vol. 21, no. 1, pp. 3–10, 2006. DOI: https://doi.org/10.1109/TPEL.2005.861110
J. Guo, H. Ge, J. Ye, A. Emadi, “Improved Method for MOSFET Voltage Rise-Time and Fall-Time Estimation in Inverter Switching Loss Calculation”, in 2015 IEEE Transportation Electrification Conference and Expo (ITEC), pp. 1–6, 2015. DOI: https://doi.org/10.1109/ITEC.2015.7165790
ROHM Semiconductor, “SCT3120AL - SiC MOSFET, 650V, 21A, 120m, TO-247N”, https://www.rohm.com/products/sic-powerdevices/sic-mosfet/sct3120al-product, datasheet, Rev. 005, 2018, URL: https://www.rohm.com/products/sic-power-devices/sic-mosfet/sct3120al-product.
M. G. Pecht, M. Kang, Uncertainty Representation, Quantification, and Management in Prognostics, pp. 193–220, 2019. DOI: https://doi.org/10.1002/9781119515326.ch8
M. E. Hajiabadi, H. R. Mashhadi, “Analysis of the Probability Distribution of LMP by Central Limit Theorem”, IEEE Transactions on Power Systems, vol. 28, no. 3, pp. 2862–2871, 2013. DOI: https://doi.org/10.1109/TPWRS.2013.2252372
C. L. T. Borges, J. A. S. Dias, “A Model to Represent Correlated Time Series in Reliability Evaluation by Non-Sequential Monte Carlo Simulation”, IEEE Transactions on Power Systems, vol. 32, no. 2, pp. 1511–1519, 2017.
M. R. Ahmed, R. Todd, A. J. Forsyth, “Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions”, IEEE Transactions on Industrial Electronics, vol. 64, no. 11, pp. 9001–9011, 2017. DOI: https://doi.org/10.1109/TIE.2017.2721882
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Copyright (c) 2025 Wesley J. de Paula, Guilherme M. Soares, Pedro S. Almeida, Henrique A. Braga

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