An Improved Methodology for Switching Losses Estimation in SiC MOSFETs

Authors

  • Wesley J. de Paula Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil
  • Gabriel H. M. Tavares Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil
  • Guilherme M. Soares Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil
  • Pedro S. Almeida Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil
  • Henrique A. C. Braga Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil

DOI:

https://doi.org/10.18618/REP.2020.3.0010

Keywords:

Power MOSFET, Sensitivity analysis, Silicon carbide, Switching losses prediction

Abstract

This work presents an improved analytical model concerning the prediction of switching losses in power MOSFETs by considering the influence of parasitic elements in the high-frequency operation of devices. By using the transistor voltage and current waveforms, it is possible to predict switching losses under hard-switching conditions adopting only parameters that can be obtained from the device datasheet. The method employs the nonlinearities associated with the junction capacitances, which are incorporated into the model through curve fitting. Besides, the sensitivity analysis is used to identify which parameters have a major influence on the estimated losses. The methodology is described in details and verified by means of experimental results concerning a SiC MOSFET, which is tested under various current and voltage conditions

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Author Biographies

Wesley J. de Paula, Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil

received the B.S., and Master degrees in electrical engineering from the Federal University of São João del-Rei (UFSJ), São João del-Rei, Brazil, in 2013 and 2015, respectively. Nowadays, he is currently working toward the Ph.D. degree in electrical engineering. Since 2015, he has been a full-time research with the modern lighting research group based at the engineering school at UFJF. He is a reviewer of international journals and conferences in the field of power electronics and electrical engineering. His main research include electronics energy conversion, high gain boost converter, device semiconductors, high-realibility static converter, and high-power density converter.

Gabriel H. M. Tavares, Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil

received the B.S. in electrical engineering from the Federal University of Juiz de Fora (UFJF), Juiz de Fora, Brazil, in 2018. His current research interests include high reliability LED drivers, solid-state lighting and microcontrollers.

Guilherme M. Soares, Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil

received the B.S., M.Sc., and Ph.D. degrees from the Federal University of Juiz de Fora (UFJF), Juiz de Fora, Brazil, in 2012, 2014, and 2017, respectively, all in electrical engineering. He has been a full-time Researcher with the Modern Lighting Research Group (NIMO), Engineering School, UFJF, since 2010. Since 2015, he has been a Professor with the Electrical Engineering Department, UFJF. His current research interests include electronic energy conversion, power factor correction, high reliability LED drivers, solid-state lighting, microcontrollers, and optimization applied to power electronics. Dr. Soares serves as a reviewer for international journals and conferences in the field of power electronics and electrical engineering.

Pedro S. Almeida, Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil

received the B.S., M.Sc., and Ph.D. degrees from the Federal University of Juiz de Fora (UFJF), Juiz de Fora, Brazil, in 2010, 2012, and 2014, all in electrical engineering. He has been a full-time Researcher with the Modern Lighting Research Group (NIMO), Engineering School, UFJF, since 2008. Since 2015, he hasbeen a Professor of electrical engineering undergraduate and postgraduate courses at UFJF. His current research interests include electronic power conversion, high power factor rectifiers and active power factor correction, solid-state lighting and LED driving, high- and lowpressure discharge lamps and high- frequency electronic ballasts, dimming, spectrophotometry, microcontrollers applied to power electronics, and the modeling and control of electronic power converters. Dr. Almeida has been a member of the IEEE Industrial Electronics Society since 2009.

Henrique A. C. Braga, Federal University of Juiz de Fora – UFJF, Juiz de Fora – MG, Brazil

received the B.Sc. degree from the Federal University of Juiz de Fora (UFJF), Juiz de Fora, Brazil, in 1982, the Masters degree from Federal University of Rio de Janeiro, Rio de Janeiro, Brazil, in 1988, and the Dr. Eng. degree from the Federal University of Santa Catarina, Florianopolis, Brazil, in 1996, all in electrical engineering. Since 1985, he has been teaching at the UFJF. He is currently a Full Professor at UFJF, teaching in the undergraduate and postgraduate programs in electrical engineering, where he is mainly concerned with the subjects of basic electronics and power electronics. From 2005 to 2006, he attended a postdoctoral stage at the University of Oviedo, Gijon, Spain. He is involved in activities related to power electronics, efficient lighting, and converters applied to renewable energy. Prof. Braga is a Senior Member of Brazilian Power Electronics Society, serving as the Chair and Associate Editor of this scientific organization from 2014 to 2015.

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Published

2020-09-30

How to Cite

[1]
W. J. de Paula, G. H. M. Tavares, G. M. Soares, P. S. Almeida, and H. A. C. Braga, “An Improved Methodology for Switching Losses Estimation in SiC MOSFETs”, Eletrônica de Potência, vol. 25, no. 3, pp. 283–292, Sep. 2020.

Issue

Vol. 25 No. 3 (2020)

Section

Original Papers

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Copyright (c) 2020 Revista Eletrônica de Potência

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