An Fpga-based Single-phase Interleaved Boost-type Pfc Rectifier Employing Gan Hemt Devices

Tiago K. Jappe; Ramiro R. Polla; Andre Fuerback; Marcelo L. Heldwein; Thiago B. Soeiro; Roberto Andrich

doi:10.18618/REP.2014.4.414422

Authors

Tiago K. Jappe Federal University of Santa Catarina – UFSC
Ramiro R. Polla Federal University of Santa Catarina – UFSC
Andre Fuerback Federal University of Santa Catarina – UFSC
Marcelo L. Heldwein Federal University of Santa Catarina – UFSC
Thiago B. Soeiro ABB Switzerland Ltd – Corporate Research / Power Electronics Group
Roberto Andrich Embraco – Electronic Controls Unit - Joinville – SC, Brazil

DOI:

https://doi.org/10.18618/REP.2014.4.414422

Keywords:

Digital control implementation, Gallium Nitride semiconductors, Power factor correction, Very high switching frequency

Abstract

The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. However, the new generation power semiconductors create new challenges to Power Electronics design that include: circuit layout to reduce parasitics, very high frequency digital control implementation, electromagnetic compatibility, passive components design, among others. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction converter in order to evaluate some of the GaN devices challenges. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, experimental results verify the feasibility of the developed digital feedback control scheme and laboratory prototype.

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Author Biographies

Tiago K. Jappe, Federal University of Santa Catarina – UFSC

was born in Ijuí, RS, Brazil in 1984. He received the B.S. degree in Electrical Engineering from the Northwest Regional University of Rio Grande do Sul, Ijuí, Brazil, in 2006. He also received a M.S. degree in Electrical Engineering from Federal University of Santa Catarina in 2009. Currently, he is a Ph.D. Degree Candidate of the Power Electronics Institute at Federal University of Santa Catarina, Brazil. Mr. Jappe is member of the Brazilian Power Electronic Society (SOBRAEP) and of the Institute of Electrical and Electronics Engineers (IEEE).

Ramiro R. Polla, Federal University of Santa Catarina – UFSC

was born in Londrina, PR, Brazil in 1986. He received the B.S. degree in electrical engineering from the Federal University of Santa Catarina, Florianopolis, Brazil, in 2013. Currently he is working in the integration between art and technology.

Andre Fuerback, Federal University of Santa Catarina – UFSC

was born in Florianopolis, SC, Brazil in 1977. He received the B.S., M.S. and Dr. degrees in electrical engineering from the Federal University of Santa Catarina, Florianopolis, Brazil, in 2004, 2006 and 2011 respectively. Currently, he is a researcher at the Power Electronics Institute (INEP) of the Federal University of Santa Catarina (UFSC), Florianopolis, Brazil.

Marcelo L. Heldwein, Federal University of Santa Catarina – UFSC

was born in Chapeco, SC, Brazil in 1974. He received the B.S. and M.S. degrees in electrical engineering from the Federal University of Santa Catarina (UFSC), Florianopolis, Brazil, in 1997 and 1999, respectively, and his Ph.D. degree from the Swiss Federal Institute of Technology (ETH Zurich), Zurich, Switzerland, in 2007. He is currently an Adjunct Professor with the Electronics and Electrical Engineering Department at the UFSC. From 1999 to 2003, he worked with industry, including research at the Power Electronics Institute, Brazil and Emerson Network Power, Brazil and Sweden. He was a Postdoctoral Fellow at the ETH Zurich and at the UFSC from 2007 to 2009. Dr. Heldwein is a member of the Brazilian Power Electronic Society (SOBRAEP) and of the Institute of Electrical and Electronics Engineers (IEEE). His research interests include Power Electronics, Power Distribution and Electromagnetic Compatibility.

Thiago B. Soeiro, ABB Switzerland Ltd – Corporate Research / Power Electronics Group

was born in Florianopolis, SC, Brazil in 1981. He received the B.S. and M.S. degrees in Electrical Engineering from the Federal University of Santa Catarina, Florianopolis, Brazil, in 2004 and 2007, respectively, and the Ph.D. degree from the Swiss Federal Institute of Technology (ETH) Zurich, Zurich, Switzerland, in 2012. During the Master and Ph.D studies he was a visiting scholar at the Power Electronics and Energy Research Group at Concordia University, Montreal, Canada and at the Center for Power Electronics Systems (CPES), Blacksburg, USA, in 2006 and 2012, respectively. From 2012 to 2013 he was a researcher at the Power Electronics Institute (INEP) of the Federal University of Santa Catarina (UFSC), Florianopolis, Brazil. He is currently with the Corporate Research of ABB Switzerland.

Roberto Andrich, Embraco – Electronic Controls Unit - Joinville – SC, Brazil

was born in Joinville, SC, Brazil. He received the B.S. in 1998 and the M.S in 2013 from the University of the State of Santa Catarina, in the same city. He works at Embraco S.A. since 1998 in the fields of Motor Control and Drives, Digital Signal Processing and Power Electronic Converters.

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