Zero Sequence Injection in Delta-CHB STATCOM: Towards Optimum Silicon Area Through Typical Power IGBT/diode Model

Dayane do Carmo Mendonça; João Victor Guimarães França; Heverton Augusto Pereira; Seleme Isaac Seleme Júnior; Allan Fagner Cupertino

doi:10.18618/REP.e202437

Authors

Dayane do Carmo Mendonça Universidade Federal de Minas Gerais https://orcid.org/0000-0003-2425-0509
João Victor Guimarães França Federal Center for Technological Education of Minas Gerais https://orcid.org/0000-0002-8150-7617
Heverton Augusto Pereira Universidade Federal de Viçosa https://orcid.org/0000-0003-0710-7815
Seleme Isaac Seleme Júnior Universidade Federal de Minas Gerais
Allan Fagner Cupertino Universidade Federal de Juiz de Fora https://orcid.org/0000-0001-8418-1985

DOI:

https://doi.org/10.18618/REP.e202437

Keywords:

Delta-CHB, STATCOM, third harmonic, silicon area

Abstract

This work quantifies the impact of third harmonic circulating current injection (THCCI) in a Cascaded H-bridge converter in delta configuration (Delta-CHB) for Static Synchronous Compensator (STATCOM) application. The analyses consist of evaluating the impact of THCCI on the silicon area of semiconductor devices. To achieve this objective, this work develops a typical IGBT/Diode model to determine the nominal current of the devices for a given maximum junction temperature. Commercial devices in the voltage classes of 1700 V, 3300 V, 4500 V, and 6500 V were considered, with nominal currents ranging from 150 A to 3600 A. A hybrid approach based on physical-oriented scaling laws and black-box modeling allows to reach a coefficient of determination higher than 79\% for all modeled variables. The results showed an increase of 43.8\% in the active area of the IGBT and 30.87\% in the active area of the diode when the peak cluster current increased by 62\% due to THCCI.

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