Thermoelectric Characterization of IGBT Power Modules: An Approach by Static and Dynamic Methods
DOI:
https://doi.org/10.18618/REP.e202510Keywords:
Thermal Impedance Characterization, IGBT Module Reliability, Virtual Junction Temperature Measurement, Thermoelectric CharacterizationAbstract
This study evaluates IGBT modules with a focus on efficiently measuring their thermal impedance, a critical factor in reliability assessments. The research employs the Thermo Electric Sensitive Parameter method to measure the Virtual Junction Temperature and obtain the Thermal Impedance curve. These experimental results are compared with datasheet values, using power modules without a baseplate. Two methodologies, dynamic and static, are utilized, both demonstrating consistent performance in evaluating thermal characteristics. The study also addresses the importance of accounting for non-linearity in thermal conductance due to temperature dependency, which is essential for accurate thermal characterization. Additionally, it explores the potential for measuring the Thermal Impedance between Junction and Case in power modules without a baseplate, offering a comprehensive understanding of thermal performance.
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J. Falck, C. Felgemacher, A. Rojko, M. Liserre, P. Zacharias, “Reliability of Power Electronic Systems: An Industry Perspective”, IEEE Industrial Electronics Magazine, vol. 12, no. 2, pp. 24–35, 2018.
H. Wang, F. Blaabjerg, “Power Electronics Reliability: State of the Art and Outlook”, IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 6, pp. 6476–6493, 2021.
K. Hu, Z. Liu, Y. Yang, F. Iannuzzo, F. Blaabjerg, “Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches”, IEEE Access, vol. 8, pp. 89988–90022, 2020.
D. Faria de Souza, D. Santos Greff, D. Luiz Rech Vidor, “Estimation of IGBT Module Degradation Using Foster’s Model and Structure Function”, in 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP), pp. 1–7, 2023.
W. Hanini, M. Ayadi, “Comparison of IGBT switching losses modeling based on the datasheet and an experimental study”, in 2019 19th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA), pp. 382–387, 2019.
A. Wintrich, U. Nicolai, W. Tursky, T. Reimann, “Application Manual Power Semiconductors”, SEMIKRON International GmbH, 2015, URL: https://shop.semikron-danfoss.com/out/pictures/wysiwigpro/application manual complete.pdf.
N. Iwamuro, T. Laska, “IGBT History, State-of-the-Art, and Future Prospects”, IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 741–752, 2017.
T. Harder, “Qualification of Power Modules for Use in Power Electronics Converter Units in Motor Vehicles”, ECPE Guideline, 2021, URL: https://www.ecpe.org/index.php?eID=dumpFile&t=f&f=30359&token=cbab0d6a7844bb815684bcae699892313b924ddb.
M. Rencz, V. Szekely, “Non-linearity issues in the dynamic compact model generation [package thermal modeling]”, in Ninteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2003., pp. 263–270, 2003.
R. Schmidt, U. Scheuermann, “Separating Failure Modes in Power Cycling Tests”, in 2012 7th International Conference on Integrated Power Electronics Systems (CIPS), pp. 1–6, 2012.
P. D. Reigosa, H. Wang, Y. Yang, F. Blaabjerg, “Prediction of Bond Wire Fatigue of IGBTs in a PV Inverter Under a Long-Term Operation”, IEEE Transactions on Power Electronics, vol. 31, no. 10, pp. 7171–7182, 2016.
J. Lutz, H. Schlangenotto, U. Scheuermann, R. De Doncker, Semiconductor Power Devices: Physics, Characteristics, Reliability, Springer Cham, 2018, doi:10.1007/978-3-319-70917-8.
M. Maerz, P. Nance, “Thermal Modeling of Power Electronic Systems”, PCIM Europe Mag. 2, 2000.
R. Wu, H. Wang, K. Ma, P. Ghimire, F. Iannuzzo, F. Blaabjerg, “A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations”, in 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2901–2908, 2014.
P. D. Judge, M. M. C. Merlin, P. D. Mitcheson, T. C. Green, “Power loss and thermal characterization of IGBT modules in the Alternate Arm converter”, in 2013 IEEE Energy Conversion Congress and Exposition, pp. 1725–1731, 2013.
D. Blackburn, “Temperature measurements of semiconductor devices- a review”, in Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545),pp. 70–80, 2004.
Y. Avenas, L. Dupont, Z. Khatir, “Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review”, IEEE Transactions on Power Electronics, vol. 27, no. 6, pp. 3081–3092, 2012.
N. Baker, “An Electrical Method for Junction Temperature Measurement of Power Semiconductor Switches”, PhD supervisor: Prof. Stig Munk-Nielsen, Aalborg University, Denmark, 2016.
C. Herold, M. Beier, J. Lutz, A. Hensler, “Improving the accuracy of junction temperature measurement with the square-roott method”, in 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), pp. 92–94, 2013.
J. Lutz, “Power cycling – methods, measurement accuracy, comparability”, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, pp. 1–8, 2020.
F. W. Gutzwiller, T. P. Sylvan, “Power semiconductor ratings under transient and intermittent loads”, Transactions of the American Institute of Electrical Engineers, Part I: Communication and Electronics, vol. 79, no. 6, pp. 699–706, 1961.
S. Singh, J. Proulx, A. Vass-Varnai, “Measuring the RthJC of Power Semiconductor Components Using Short Pulses”, in 2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), pp. 1–4, 2021.
I. 60747-9, “Semiconductor devices–Discrete devices–Part 9: Insulated-gate bipolar transistors (IGBTs)”, International Electrotechnical Commission, 2019.
D. L. Blackburn, F. F. Oettinger, “Transient thermal response measurements of power transistors”, in 1974 IEEE Power Electronics Specialists Conference, pp. 140–148, 1974.
J. Sofia, “Analysis of thermal transient data with synthesized dynamic models for semiconductor devices”, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, vol. 18, no. 1, pp. 39–47, 1995.
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